Prof. Yakov Roizin

School of Electrical Engineering
ביה"ס להנדסת חשמל אורח
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Yakov Roizin, full visiting professor of Tel Aviv University, supervises  graduate students, consults R&D projects and gives lectures on semiconductor devices and technologies. Prof. Roizin  received his Ph.D. and D.Sc. (Hab) degrees and Professor’s title from the leading academic institutions of the former USSR. He is the author of more than 300 publications, including 70 issued patents.

   Prof. Roizin is Tower Semiconductor Fellow and Director of Emerging Technologies. Tower Semiconductor is the largest world  analog  semiconductor foundry, having production and R&D facilities in Israel, USA and Japan. Fellow is the Company’s highest technical honour and position, corresponding to VP on the managerial track.  Prof. Roizin  has been serving with Tower Semiconductor in various positions since 1997. Prior to his current position, he held engineering and managerial positions in R&D departments. During his career, Yakov  supervised the development of different types of semiconductor devices, including non-volatile memories and sensors for embedded CMOS technologies. Prof. Roizin was Coordinator/Supervisor of numerous EU and Israeli Ministry of Industry Research Consortia on VLSI. Yakov  is responsible for interaction with Tower Semiconductor research partners in Industry and Academia.  Currently, Prof. Roizin is working on Tower Semiconductor roadmap R&D projects related to sensors for different applications, including devices on silicon and compound semiconductors.

Research Interests

The current research interests and activities of Prof. Roizin are centered around semiconductor  technologies and devices supporting the rapidly expanding Internet of Things and smart automotive markets:   

  1. Sensors based on nanomaterials and devices (MTJ, nanowires)
  2. GaN HEMT transistors and GaN sensors
  3. Silicon image sensors for advanced applications (infrared, CIS with global shutters)
  4. Advanced semiconductor memories and emerging NVM solutions (ReRAM and MRAM)
  5. Memristors  integrated in CMOS
  6. Floating gate devices for radiation measurements
  7. High-k materials for application as gate isolators and dielectrics of 3D MIM capacitors.
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